Mitsubishi model library moves to Agilent design system

RF simulation models include parasitic effect

-- Test & Measurement World, 2/6/2012 7:00:00 AM

Agilent Technologies announced that the latest model library for Mitsubishi Electric's nonlinear GaAs and GaN RF devices is now available for use with Agilent's ADS (Advanced Design System). The model library includes high-power GaN HEMT and low-noise HEMT devices commonly used in base-station and direct-broadcast satellite receivers, as well as other radio communications equipment.

Models help users explore design alternatives in order to meet performance specifications with a cost-effective solution. The model library provides an ADS symbol for schematic capture and a simulation model that includes parasitic effect. It also offers a broad selection of body sizes and part values that enables sweeps and optimizations.

In addition, users can generate X-parameter models of their circuit-level designs directly from ADS. X-parameters provide fast and accurate behavioral modeling. These capabilities are vital to designing high-performance RF modules and RF system-in-package components.

The upgraded library works seamlessly with ADS 2009 Update 1, as well as prior ADS releases. ADS2011 and future versions will also be supported. Models can be obtained by contacting Mitsubishi Electric.

Agilent Technologies, www.agilent.com/find/eesof-ads