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Smart test for nanometer designs

As design processes move to 130 nm and below, novel defect types necessitate equally novel test methodologies

Ron Press, Mentor Graphics, Wilsonville, OR -- Test & Measurement World, 10/1/2004

Memory BIST, IDDQ, and functional patterns

Web exclusives:
The role of IDDQ and functional patterns

Memory BIST for at-speed test

When semiconductor devices had geometries of 0.18 microns and larger, most defects manifested themselves as static faults. Test strategies based on stuck-at fault-model scan patterns and standard memory BIST (built-in self-test) were effective, and the addition of IDDQ tests and a limited set of functional patterns could improve the test quality even further.

But as fabrication processes have shrunk to 130 nm and smaller, these test methods are no longer adequate. High-frequency, heavily integrated devices have physical properties that result in a different distribution of defects. In particular, the number of timing defects has increased to the point that test quality will suffer without tests specifically targeting them.

Research from LSI Logic and Intel has shown that the population of timing defects for nanometer designs is in the range of 2% or more of all defects (Refs. 1 and 2). Consequently, if you use tests that only detect static defects, you will not detect 2% of the defects, and you will unknowingly ship defective parts as good product.

Imagine you have a 130-nm fabrication process with a yield of 70%. If your stuck-at test coverage is 100% and memory BIST detects 100% of every static defect, then 2% of defects—untested timing defects—will still remain undetected. You will have a defect rate of about 0.7%. In other words, you will ship 7000 defective devices per million (DPM)—unacceptable for many companies. You need to add tests that target these defects to your test suite.

Effective at-speed scan testing

Testing with at-speed scan patterns offers one way to detect timing defects within the digital logic of a design. At-speed scan has been available for many years but was only used on very high-speed devices and devices with very high quality goals. It has now become widely adopted for identifying timing defects in nanometer designs.

By using automatic test-pattern generation (ATPG) tools, you can automatically target timing faults and produce high-quality at-speed scan patterns. The most popular at-speed scan pattern is the broadside transition pattern. Transition patterns target and test for a slow-to-rise and slow-to-fall fault at every gate terminal.

 
Figure 1.  With scan values loaded to set up a broadside pattern, two functional-mode pulses cause a 1 to 0 transition to propagate; the response is captured at the end of the path.





















Broadside patterns involve loading scan cells to produce both an initial value at the start of a path and an opposite value ready to propagate through the path. Figure 1 shows a scan-chain load sequence during which an initial value of 1 is loaded into the scan cell (labeled B) near the middle of the diagram. During the same scan-chain load, the opposite value is applied at the D input of the scan cell B flip-flop, or latch. In this case a 0 is loaded into A. Consequently, when the circuit is placed into functional mode, the tester can apply two successive at-speed clock pulses to verify the logic in the path between scan cells B and C.

For this example, the first functional-mode clock pulse will cause cell B to capture the 0 value, launching a 1 to 0 transition down the path from B to C. By the second clock pulse, the transition should have reached cell C, which should capture the 0. Failure to do so indicates a timing defect. The clocks used in the broadside scan test are pulsed when the circuit is in the functional mode—that is, when the scan-enable signal SE in Figure 2 is low. Scan-chain loading occurs prior to the application of the at-speed clocks and need not take place at functional-clock speeds.

 
Figure 2.  Broadside clock pulses are used during at-speed scan testing. The at-speed launch and capture pulses cause a transition to propagate and capture it at the end of a path. The scan chain loading can occur at a much lower frequency.

You could also apply at-speed clocking by using the last shift of the scan-chain load to initiate the at-speed transition. Launch-off-shift patterns are easier for ATPG tools to generate, but they require that scan-enable and shift operations meet the circuit-critical timing. In addition, timing failures in the scan chain can cause the circuit to fail the test and unnecessarily increase yield loss. As a result, most companies avoid the use of launch-off-shift patterns.

Accurate clock pulses

When testers are used to supply the at-speed clock pulses, there can be variations between the tester clocks and the device's internal phase-locked-loop (PLL) clocking (Figure 3). Some companies have started to use transition fault patterns using accurate PLL clocking to address the timing defects in the logic portion of nanometer devices.

 

Figure 3.  PLL clocks can be used for accurate at-speed scan testing. A named capture procedure is used to describe the external signal behavior that causes the desired internal clock pulses.

One solution is to have ATPG tools use the PLL to provide the at-speed clock pulses. The clock gating and control logic of the PLL must be able to generate the desired clock pulse sequences. The ATPG tools then only need a "named capture procedure" description of what external cycles are necessary to cause the desired internal clocks to pulse (Ref. 3).

ATPG tools will automatically decide which clock pulse sequences are necessary to detect the targeted faults. The internal clock pulses are transformed into the appropriate external cycles defined in the named capture procedure.

Some test-mode and clock-gating control designs are complex and require many bits and cycles to set up. Named capture procedures can ease this difficulty by using "conditions" that must be initialized for the clocking to occur. The internal condition values required for the named capture procedure are defined. Then, the ATPG tool will load scan cells to produce the condition values when the corresponding named capture procedure is to be used. Often, the named capture procedure loads clock gating decoders or sequential gating registers.

How to apply all the patterns

If you supplement the stuck-at and at-speed scan patterns with additional patterns, you can improve test quality but you'll also greatly increase the number of test patterns and the required test time—possibly beyond the capabilities of your existing test equipment. For example, broadside transition scan patterns are typically three to five times larger than the stuck-at pattern set. Test resource capacity would need to grow at least as much to support the stuck-at and new at-speed patterns. Other fault models that are on the horizon, such as the multiple-detect fault model (Ref. 4), will also require an increase in test resources

Embedded deterministic test (EDT) offers an answer to this problem. EDT enables scan patterns to increase by up to 100x without sacrificing test time or test data volume (Ref. 5). It inserts compression logic only around the device's scan chain I/O. Using EDT does not necessitate any special design requirements (such as handling X-states) or logic changes to the core design. Testers behave as if they are running scan patterns without any compression logic. Even EDT diagnostics can be performed directly from the compressed responses without special test modes or additional patterns.

 

Figure 4. An embedded deterministic test architecture decompresses scan data on chip and compacts the test results.

EDT supports all fault models and pattern types that are possible with standard scan, and it enables companies to apply all the at-speed patterns needed and any set of additional patterns for nanometer devices without increasing their test costs.


Author Information
Ron Press is a technical marketing manager for the Mentor Graphics Design-for-Test Division. He received a BSEE from the University of Massachusetts and has worked in the test and built-in test industry for the past 17 years. Email: ron_press@mentor.com.


REFERENCES
  1. Kim, K., et al., "Delay Defect Characteristics and Testing Strategies," IEEE Design & Test of Computers, September–October 2003. pp. 8–16.
  2. Benware, B., et al., "Effectiveness Comparisons of Outlier Screening Methods for Frequency Dependent Defects on Complex ASICs," Proceedings of the 21st IEEE VLSI Test Symposium (VTS 03), IEEE Computer Society Press, 2003.
  3. Tendolkar, N., et al., "Novel Techniques for Achieving High At-Speed Transition Fault Test Coverage for Motorola's Microprocessors Based on PowerPC Instruction Set Architecture," Proceedings of the 20th IEEE VLSI Test Symposium (VTS 02), IEEE Computer Society Press, 2002. pp. 3–8.
  4. Benware, B., et al., "Impact of Multiple-Detect Test Patterns on Product Quality," Proceedings of the International Test Conference 2003, IEEE Computer Society Press, 2003.
  5. Poehl, F., et al., "Industrial Experience with Adoption of EDT for Low-Cost Test without Concessions," Proceedings of the International Test Conference 2003, IEEE Computer Society Press, 2003.
  •  

    Memory BIST, IDDQ, and functional patterns

    Nanometer designs present challenges for IDDQ tests and functional patterns while opening opportunities for memory BIST. For more, see " The role of IDDQ and functional patterns ," below, and "Memory BIST for at-speed test ."

    See also this related article: Boyer, Jeff, and Ron Press, "New methods test small memory arrays, " Test & Measurement World, February 2003. www.tmworld.com/archives.

     

    The role of IDDQ and functional patterns

    Both IDDQ tests and functional patterns can be used to target timing defects. The nature of nanometer processes, however, cause complications with IDDQ and functional tests. IDDQ tests detect many types of defects by checking for unusually high current. Unfortunately, many companies do not use IDDQ tests for 130-nm and smaller processes because the noise floor is too high to distinguish a good device from a faulty device. There are some attempts to check the IDDQ for a region of devices on a wafer and identify defective devices by a notable variance from the norm. So far, this strategy is not widely accepted and, thus, IDDQ tests are not part of many nanometer test strategies.

    Functional tests can also be used to target timing defects, but there are many complications when trying to produce an effective functional test set. Pattern generation requires detailed circuit knowledge. Even when a functional pattern set can be produced, it is very difficult to determine the fault coverage of the patterns.

    Fault grading simulations for functional patterns is extremely time consuming. When the fault grade can be determined, it is often lower than desired and very complicated to improve. Furthermore, functional patterns often run at high frequencies and require high-end test equipment. In addition, nanometer processes enable more integration and higher gate counts per device. The complexity of functional pattern generation increases exponentially with gate count.

    For these reasons, reliance on functional testing has been reduced at many companies. In fact, there are many companies with initiatives to remove functional patterns from production test methodologies altogether.

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