Verigy V6000 tests both flash and DRAM

-- Test & Measurement World, 11/26/2008 7:23:00 AM

Verigy has announced the V6000 for testing both flash and DRAM memory on the same ATE (automated test equipment) platform. The company reports that Numonyx selected the V6000 for high-volume wafer sort of its NAND devices and KGD (known-good die) after competitive benchmark evaluations.

The V6000 family of testers includes the V6000e, which supports memory test-program development and device characterization in the office or lab environment; the V6000 WS, which enables 300-mm one-touchdown wafer-sort probing for both flash and DRAM applications; and the V6000 FT, which performs single-insertion final test of flash, DRAM, or MCPs (multi-chip packages) that include both flash and DRAM memory.

All V6000 systems include Verigy’s Active Matrix technology and sixth-generation Tester-Per-Site architecture. The Active Matrix technology provides massive parallelism, supporting over 18,000 I/O pins and over 4000 programmable power supplies, and it enhances signal integrity due to a shortened signal paths to pin electronics. The V6000 offers scalable AC performance at 140, 280, 560, and up to 880 Mbps.

The V6000 can test either flash or DRAM memory by simply changing to a new test program and probe card. System performance and pin count can be upgraded by adding test-site modules or Active Matrix modules. The V6000 WS uses low-cost, connectorless probe cards, accommodates different size probe cards (450 mm or 560 mm), and interfaces to all major probers.

All the V6000 testers also share the same operating system software, hardware and interface, allowing users to develop, share, and move test programs between testers as devices go from engineering and characterization to wafer sort and final test. With minor modifications, test programs from Verigy’s V5000 family of testers can be used with the V6000 platform. The V6000 is water-cooled, requiring a smaller footprint and using less energy than air-cooled systems.

www.verigy.com/go/memory

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